Quantum confinement effects in semiconductor clusters. II
نویسندگان
چکیده
منابع مشابه
The Use of Quantum Potentials for Confinement in Semiconductor Devices
As MOSFETs are scaled into sub 100 nm (decanano) dimensions, quantum mechanical confinement and tunnelling start to dramatically affect their characteristics. In this paper we describe the introduction of quantum corrections within a 3D drift diffusion simulation framework using quantum potentials. We compare the density gradient (DG) and the effective potential (EP) approaches in term of accur...
متن کاملQuantum Confinement in Heterostructured Semiconductor Nanowires with Graded Interfaces
In a simple approximation, quantum wires can be modeled by cylinders composed by two semiconductor materials with different energy gaps, A and B, as shown in Fig. 1 (a) and (b), for block-by-block and core-shell wires, respectively. In both cases, the existence of smooth interfaces with thickness w between materials is considered, by assuming that the composition χ of the alloy AχB1-χ varies li...
متن کاملDecoupling the effects of confinement and passivation on semiconductor quantum dots.
Semiconductor (SC) quantum dots (QDs) have recently been fabricated by both chemical and plasma techniques for specific absorption and emission of light. Their optical properties are governed by the size of the QD and the chemistry of any passivation at their surface. Here, we decouple the effects of confinement and passivation by utilising DC magnetron sputtering to fabricate SC QDs in a perfl...
متن کاملEffects of quantum confinement on the doping limit of semiconductor nanowires.
We have calculated the effects of quantum confinement on maximum achievable free carrier concentrations in semiconductor nanowires. Our calculations are based on the amphoteric defect model, which describes the thermodynamic doping limit in semiconductors in terms of the compensation of external dopants by native defects. We find that the generation of amphoteric native defects strongly limits ...
متن کاملQuantum interference effects in InAs semiconductor nanowires
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The Journal of Chemical Physics
سال: 1996
ISSN: 0021-9606,1089-7690
DOI: 10.1063/1.472232